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Effect of source temperature on the morphology and photoluminescence properties of ZnO nanostructures
2010
Applied Surface Science
The influence of the source temperature on the morphology and luminescence properties of ZnO nanostructures has been investigated. ...
In addition, the growth mechanism of the ZnO nanostructures is discussed based on the reaction conditions. ...
Khan and Kordesch [20] studied the dependence of the substrate temperature on the optical properties of the ZnO nanostructures. ...
doi:10.1016/j.apsusc.2010.03.101
fatcat:turqpayxwnd4phtuwkx2tdryga
Monitoring selective etching of self-assembled nanostructured a-Si:Al films
2019
Nanotechnology
In this work we study functionalization of these structures by removal of the Al nanowires. ...
Nanoporous and nanowire structures based on silicon (Si) have a well recognized potential in a number of applications such as photovoltaics, energy storage and thermoelectricity. ...
Acknowledgments This work was funded by the Research Council of Norway through the funding program FRINATEK, project No. 231658. ...
doi:10.1088/1361-6528/aafb86
fatcat:u4i7uox55jdfhgrknvzpcjo5wa
Localized heating induced chemical vapor deposition for one-dimensional nanostructure synthesis
2010
Journal of Applied Physics
Localized heating has emerged as a viable technique for the site specific synthesis of one-dimensional ͑1D͒ nanostructures. ...
Resistive heating has been extensively used to realize highly localized regions of elevated temperature while maintaining a microelectronics-compatible thermal environment elsewhere. ...
An example of two symmetric silicon nanowire growth regions on a microbridge is seen in Fig. 1͑e͒ . ...
doi:10.1063/1.3304835
fatcat:sdkhf2r73jdi5fgfukukvvw32a
Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators
2021
Nanomaterials
exploit the improved thermoelectric properties of nanostructured silicon-based materials. ...
The device architecture helps to translate a vertically occurring temperature gradient into a lateral temperature difference across the nanowires. ...
Differently than vertically (π-shaped) or laterally arranged macro thermoelectric generators in which the thermoelectric legs are aligned to the direction of the existing thermal gradient, silicon-based ...
doi:10.3390/nano11020517
pmid:33670539
fatcat:fawkpsqtdjfc5e5lfvcdfdf6de
Solution Processable Nanowire Field-Effect Transistors
2011
Materials Research Society Symposium Proceedings
Recent developments in controllable nanowire positioning and orientation on the substrates and electrical property selection provide the necessary technological breakthroughs enabling the fabrications ...
In this chapter, we discuss the nanowire assembly methods and high-spatial-resolution scanning probe microscopy techniques towards scalable fabrication of high-performance printable nanowire field-effect ...
The main challenges in self-assembly are the precise alignment and positioning of the nanowires on predefined electrode areas and the purification and selection of nanowires with desired electrical properties ...
doi:10.1557/opl.2011.1437
fatcat:7bjwjbvqurcxjjvuftvccjdd3a
Solution-Processable Nanowire Field-Effect Transistors
[chapter]
2017
Nanowires - New Insights
Recent developments in controllable nanowire positioning and orientation on the substrates and electrical property selection provide the necessary technological breakthroughs enabling the fabrications ...
In this chapter, we discuss the nanowire assembly methods and high-spatial-resolution scanning probe microscopy techniques towards scalable fabrication of high-performance printable nanowire field-effect ...
The main challenges in self-assembly are the precise alignment and positioning of the nanowires on predefined electrode areas and the purification and selection of nanowires with desired electrical properties ...
doi:10.5772/intechopen.68800
fatcat:jx64kblpyzbulaogu2ymg7teli
Facile Synthesis Of Vertically Aligned Zno Nanowires On Carbon Layer By Vapour Deposition
2011
Zenodo
A facile vapour deposition method of synthesis of vertically aligned ZnO nanowires on carbon seed layer was developed. ...
The photoluminescence spectra (PL) of obtained ZnO samples at a room temperature were studied using He-Cd laser (325 nm line) as excitation source. ...
In most studies, for this experiment. ...
doi:10.5281/zenodo.1072918
fatcat:qvgqppkpxrbvxlue5sq3bdwxuq
The large-scale integration of high-performance silicon nanowire field effect transistors
2009
Nanotechnology
In this work we present a CMOS-compatible self-aligning process for the large-scale-integration of high-performance nanowire field effect transistors with well-saturated drain currents, steep subthreshold ...
slopes at low drain voltage and a large on/off current ratio (>10 7 ). ...
Contribution of the National Institute of Standards and Technology (NIST); not subject to US copyright. ...
doi:10.1088/0957-4484/20/41/415202
pmid:19755723
fatcat:4e2cnejahvhz3fwayh4cbs7ife
The influence of substrate location and deposition time on ZnO nanostructures
2010
Malaysian Journal of Science
A study on the formation of ZnO nanostructures using the carbothermal evaporation method without catalyst and at atmospheric argon pressure has been conducted. ...
The results of these parametric studies based on field-emission scanning electron microscopy (FESEM), Energy dispersive X-ray spectroscopy (EDX) spectrum and X-ray diffraction (XRD) analyses support the ...
At 11 cm away from the center aligned ZnO nanowires were formed on silicon substrate as illustrated in figure 1 (b). ...
doi:10.22452/mjs.vol29no2.10
fatcat:sxolrcq3efavzoina2bgnhcejm
Phonon thermal conductivity suppression of bulk silicon nanowire composites for efficient thermoelectric conversion
2010
Optics Express
Vertically-aligned silicon nanowires (SiNWs) that demonstrate reductions of phonon thermal conductivities are ideal components for thermoelectric devices. ...
In this paper, we present large-area silicon nanowire arrays in various lengths using a silver-induced, electroless-etching method that is applicable to both n-and p-type substrates. ...
Kuo at the Department of Photonics, National Chiao Tung University in Taiwan for technical support. ...
doi:10.1364/oe.18.00a467
pmid:21165077
fatcat:io2qdqybbbcqdbxxuzt6u5dequ
Recent advances in silicon-based nanostructures for thermoelectric applications
2023
APL Materials
This work is focused on the recent advances in silicon and silicon-based thermoelectric nanomaterials of the last decade—at both the theoretical and experimental level—with the spotlight on the most recent ...
In this work, implementations of silicon-based thermoelectric nanomaterials are reviewed. ...
In an experimental approach, Stranz et al. 97 studied the effect of different impurity doping-classically used for tuning the electrical properties of silicon-on the thermal conductivity. ...
doi:10.1063/5.0134208
fatcat:mp2ocnfg2rbl7nvjj545pzwzw4
A triboelectric generator based on self-poled Nylon-11 nanowires fabricated by gas-flow assisted template wetting
2017
Energy & Environmental Science
Highly crystalline and "self-poled" δ′-phase Nylon-11 nanowires, fabricated using a novel gas-flow assisted nano-template infiltration method, exhibit enhanced triboelectric energy harvesting performance ...
As a result of this cooling, a temperature gradient is generated both on the top surface and the side of the Nylon solution. ...
Self-poled d 0 -phase nanowires through GANT method Differential scanning calorimetry (DSC) was carried out to determine the thermal and structural properties of our Nylon-11 nanowires as shown in Fig ...
doi:10.1039/c7ee01292f
fatcat:sbj3nkus2rfsbolgzwkovigmyu
Integration of Metal Oxide Nanowires in Flexible Gas Sensing Devices
2013
Sensors
Advances in fabrication technologies now allow the preparation of nanowires on flexible substrates, expanding the potential market of the resulting sensors. ...
Metal oxide nanowires are very promising active materials for different applications, especially in the field of gas sensors. ...
This methodology works thanks to the deposition of nanowires on silicon-on-oxide wafers. ...
doi:10.3390/s130810659
pmid:23955436
pmcid:PMC3812622
fatcat:llwub5s4uvaqzpdll5efouqss4
Dielectrophoretic alignment of metal and metal oxide nanowires and nanotubes: A universal set of parameters for bridging prepatterned microelectrodes
2011
Journal of Colloid and Interface Science
For reproducible nanowire alignment, a universal set of dielectrophoresis parameters to align any arbitrary nanowire material was determined. ...
In our experiments, we obtained good results by using a peak-to-peak potential of 2.1 V at a frequency of 1.2 Â 10 5 Hz. ...
One of the authors (W.A.) acknowledges support from the Higher Education Commission in Pakistan. ...
doi:10.1016/j.jcis.2010.12.011
pmid:21237462
fatcat:23rbelfthndphgjivi3f6fgk6y
Advances of SiOx and Si/SiOx Core-Shell Nanowires
[chapter]
2010
Nanowires Science and Technology
However, there are only a few studies that report on the properties on the coreshell nanowires (Jia et al., 2007 , King et al., 2008 . Below is compilation of the properties being reported. ...
The precipitation, nucleation and growth of Si nanowires always occurred in the region closest to the cold region indicating that the temperature gradient was the driving force for the nanowire growth ...
A new family of nanowires, the photoferroelectric ones, is presented in connection with their possible applications in non-volatile memory devices. ...
doi:10.5772/39497
fatcat:dhdilycjgvgitguabhovcxkiqa
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