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Fully coupled electrothermal simulation of resistive random access memory (RRAM) array
2020
Science China Information Sciences
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Dear editor, Resistive random access memory (RRAM) is a promising candidate for next generation memory technology [1] and the rapid progress in the threedimensional (3D) integration technology facilitates ...
Using the developed simulator, the electrothermal properties of a proposed cross-gate vertical RRAM (CGVRRAM) array are investigated. Architecture of the proposed CGVRRAM array. ...
Dear editor, Resistive random access memory (RRAM) is a promising candidate for next generation memory technology [1] and the rapid progress in the threedimensional (3D) integration technology facilitates ...
doi:10.1007/s11432-019-2667-5
fatcat:4ma6apbmlbdknapdp765vyhuua
Performance Enhancement of Large Crossbar Resistive Memories with Complementary and 1D1R-1R1D RRAM Structures
2021
IEEE Open Journal of Nanotechnology
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The paper proposes novel solutions to improve the signal and thermal integrity of crossbar arrays of Resistive Random-Access Memories, that are among the most promising technologies for the 3D monolithic ...
The electrothermal performance of these new structures is compared to that of the reference one, for a case-study given by a 4×4×4 array. ...
Among these, binary oxide Resistive Random-Access Memories (RRAMs) are emerging as promising beyond CMOS technology to substitute FLASHs, thanks to their excellent nano-downscaling potential for increased ...
doi:10.1109/ojnano.2021.3124846
fatcat:6q4s6scsvvetlbsza62p5776fe
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
2020
Nanoscale Research Letters
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In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low ...
First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. ...
Acknowledgments First of all, the authors would like to thank and gratefully acknowledge all ...
doi:10.1186/s11671-020-03299-9
pmid:32323059
pmcid:PMC7176808
fatcat:p3bp3ahunbe7lont6by333oimi
Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides
2022
Micromachines
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Based on the electrical conductivity model built for graphene oxide, the thermal crosstalk effects of resistive random access memory (RRAM) with graphene electrode and Pt electrode are simulated and compared ...
The thermal crosstalk effects of Pt-RRAM with different metal oxides of TiOx, NiOx, HfOx, and ZrOx are further simulated and compared to guide its compatibility design. ...
Notably, resistive random access memory (RRAM) is one of those promising candidates for next-generation high-capacity data storage due to its cost-effective fabrication, high operating speed, long data ...
doi:10.3390/mi13020266
pmid:35208390
pmcid:PMC8880066
fatcat:65t7pnamufhj3nuyw4akf472lu
Access devices for 3D crosspoint memory
2014
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
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The authors start with a brief overview of circuit-level considerations for crosspoint memory arrays, and discuss the role of the access device in minimizing leakage through the many nonselected cells, ...
The emergence of new nonvolatile memory (NVM) technologies-such as phase change memory, resistive, and spin-torque-transfer magnetic RAM-has been motivated by exciting applications such as storage class ...
The set of requirements listed above make it very challenging to find access devices that are fully suitable for high-density, 3D multilayer resistive crosspoint memory. ...
doi:10.1116/1.4889999
fatcat:oa2vb33xp5dbvaqrw6efyimdzm
Roadmap on emerging hardware and technology for machine learning
2020
Nanotechnology
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However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. ...
The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges ...
J.L.M.R. thanks the Thomas Lord Foundation for support of her Thomas Lord Assistant Professorship at the Department of Materials Science and Engineering (DMSE) at the Massachusetts Institute of Technology ...
doi:10.1088/1361-6528/aba70f
pmid:32679577
fatcat:t6me4pfxgfhdvbdqjnyjuksf2e
2020 Index IEEE Transactions on Electron Devices Vol. 67
2020
IEEE Transactions on Electron Devices
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Access Memory: Present and Future; TED April 2020 1407-1419 Ilatikhameneh, H., see Chen, C., TED Aug. 2020 3478-3485 Illy, S., see Marek, A., TED Dec. 2020 5729-5735 Ilori, O.O., see Rughoobur, G. ...
Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode; TED Aug. 2020 3411-3416 Hsu, T., Lue, H., Du, P., Chen, W., Yeh, T., Lee, L., Chiu, C., Wang, K., and Lu ...
Yun, J., +, TED June 2020 2529-2535
Modeling and Simulation of Resistive Random Access Memory With
Graphene Electrode. ...
doi:10.1109/ted.2021.3054448
fatcat:r4ertn5jordkfjjvorvss7n6ju
Emerging memories: resistive switching mechanisms and current status
2012
Reports on progress in physics (Print)
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The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access ...
memories (RRAMs). ...
Acknowledgments DSJ would like to acknowledge research grants from the Korea Institute of Science and Technology (grant nos 2V02410 and 2E22123). ...
doi:10.1088/0034-4885/75/7/076502
pmid:22790779
fatcat:d4ls2ytrurhvpgt4bw5uv2shwu
Table of contents
2021
IEEE Transactions on Electron Devices
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Suri 3346 Physics-Based Stochastic Three-Dimensional Modeling for Metal-Oxide Resistive Random Access Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Shin 3339 Fully Unsupervised Spike-Rate-Dependent Plasticity Learning With Oxide-Based Memory Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
doi:10.1109/ted.2021.3087051
fatcat:udjtxiufzreflkkbxr7fdibia4
2021 Index IEEE Transactions on Electron Devices Vol. 68
2021
IEEE Transactions on Electron Devices
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The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. ...
Random-Access Memory. ...
., +, TED Jan. 2021 257-263 Signal and Thermal Integrity Analysis of 3-D Stacked Resistive Random Access Memories. ...
doi:10.1109/ted.2021.3138305
fatcat:37sowz27xjc4bjhktlrldi2nja
2013 Index IEEE Transactions on Electron Devices Vol. 60
2013
IEEE Transactions on Electron Devices
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The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination. ...
Design and Simulation of 5-20-kV GaN Enhancement-Mode Vertical Superjunction HEMT. ...
., +, TED Oct. 2013 3230-3237 Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy. ...
doi:10.1109/ted.2013.2291536
fatcat:ov6jcpfqwjfffd34ftqwfx6jia
ICCEM 2020 Front Matter
2020
2020 IEEE International Conference on Computational Electromagnetics (ICCEM)
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Modeling and Simulation of Resistive Random Access
Memory (RRAM) with Different Resistive Switching Oxides
Tan-Yi Li, Da-Wei Wang, Sichao Du, Wenchao Chen and Wen-Yan Yin
2.50pm
M-PM1-R3.6
[#1570604289 ...
This paper will describe in some detail the numerical modelling of station patterns using embedded element patterns, which fully capture the complex mutual coupling environment of each antenna. ...
doi:10.1109/iccem47450.2020.9219463
fatcat:brgvy2m7t5exhiqblr444i2m7e
Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications
2014
Materials
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Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. ...
This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties ...
Acknowledgments The authors acknowledge the financial support of the National Natural Science Foundation of China (NSFC) (Nos. 51172291, 11232015, 11372361, 11302267). ...
doi:10.3390/ma7096377
pmid:28788196
pmcid:PMC5456150
fatcat:5mgernrzrveltdzmcavm2teg6y
Study of Thermal-induced Threshold Switching Devices for Selector Applications
2018
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Emerging Non-Volatile Memory (NVM) devices such as Phase Change Memory (PCM), Resistive Random Access Memory (RRAM), and Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) are promising candidates ...
for the Storage Class Memory (SCM), which was proposed to be a new class of memory devices to fill the gap between Dynamic Random-Access Memory (DRAM) and storage memory. ...
Resistive Random Access Memory Resistive switching memory is a type of device that can be switched to different resistance states by application of electrical bias. ...
doi:10.1184/r1/7223993
fatcat:sqbbq4bog5f5hcgantsnxqpqba
Nanosecond Tuning In Microwave Resonators Fabricated On Ruddlesden-Popper Thin Films
2017
Zenodo
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An Author Index appears at the back of this book. The Meeting Guide contains locations of sessions with times, titles and authors of papers, but not presentation abstracts. ...
The abstracts are reproduced as submitted by authors, a format that provides for longer, more detailed descriptions of papers. ...
One such application is resistive random access memory devices. ...
doi:10.5281/zenodo.1155779
fatcat:oczwziam2bar7dpe7r7yybcu3y
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