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Experimental Analysis of Thermal Coupling in 3-D Integrated Circuits

Ioannis Savidis, Boris Vaisband, Eby G. Friedman
2015 IEEE Transactions on Very Large Scale Integration (vlsi) Systems  
Design insight into thermal coupling in 3-D integrated circuits (ICs) through both experiment and simulation is provided, and suggestions to mitigate thermal effects in 3-D ICs are offered.  ...  Two wafers are vertically bonded to form a 3-D stack.  ...  coupling in 3-D ICs.  ... 
doi:10.1109/tvlsi.2014.2357441 fatcat:pjea2amcgjdpdgkqvhp7uslbei

SDN Framework for Securing IoT Networks [chapter]

Prabhakar Krishnan, Jisha S. Najeem, Krishnashree Achuthan
2017 Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering  
As the billions of already connected devices and newly added devices grow this network, IoT pose the most complex operational and information technology challenges to the way networks are designed and  ...  We review prior works in this area and discuss our future work to solve security and privacy challenges of heterogeneous systems and networks in IoT.  ...  Fig. 5 . 5 (a) Tightly coupled SDN-IoT integration, (b) flow analysis in SDN-IoT hybrid device Fig. 6 . 6 SDN integrated IoT application Fig. 8 . 8 (a) Botnet attack mitigation dynamics (b) genuine  ... 
doi:10.1007/978-3-319-73423-1_11 fatcat:fdyjkwosu5aqxkq6qfvtjyyi6i

Noise management in highly heterogeneous SoC based integrated circuits

Emre Salman
2010 2010 International SoC Design Conference  
The two primary noise coupling paths in hybrid systems utilizing three dimensional (3-D) integration technology are also identified.  ...  In the first step, a methodology is described to efficiently analyze noise coupling in large scale circuits while maintaining sufficient accuracy.  ...  In a monolithic 3-D IC, multiple planes or tiers are stacked on top of each other where through silicon vias (TSVs) are utilized to achieve communication among the planes [8] . 3-D technology is highly  ... 
doi:10.1109/socdc.2010.5682987 fatcat:lqvcqz3k7vhf5l73jic37x52ue

Novel Lockstep-based Approach with Roll-back and Roll-forward Recovery to Mitigate Radiation-Induced Soft Errors

Server Kasap, Eduardo Weber Wachter, Xiaojun Zhai, Shoaib Ehsan, Klaus D. McDonald-Maier
2020 2020 IEEE Nordic Circuits and Systems Conference (NorCAS)  
Despite APSoC's advantages, like any other electronic device, they are prone to radiation effects.  ...  TMR subsystem in Zynq's programmable logic (PL) layer.  ...  D.  ... 
doi:10.1109/norcas51424.2020.9265137 fatcat:2bbzg35aujbqbnqgocmr2u2f6y

High step-up interleaved boost converter utilising stacked half-bridge rectifier configuration

Musbahu Muhammad, S. Lambert, M. Armstrong, V. Pickert
2019 The Journal of Engineering  
By stacking the secondary side of the interleaved coupled inductor to its primary side, a high step-up voltage gain and distributed voltage stress are realised.  ...  Low-voltage rated devices ultimately reduce the conduction losses.  ...  1 − D) + 2NV in (1 − D) (3) From ( 1 ), ( 2 ), and (3), the ideal voltage gain is given by M ideal = V o V in = 2(N + 1) (1 − D) (4) The coupled inductor turns ratio N can be adjusted to achieve the  ... 
doi:10.1049/joe.2018.8015 fatcat:w5yjyyjtn5bzfal6q7fbogwjau

Design Methodologies for 3D Mixed Signal Integrated Circuits

Wulong Liu, Guoqing Chen, Xue Han, Yu Wang, Yuan Xie, Huazhong Yang
2014 Proceedings of the The 51st Annual Design Automation Conference on Design Automation Conference - DAC '14  
The de sign methodologies are verified with a case study, in which a 12-bit successive approximation register analog-to-digital converter (SAR ADC) is re-designed by partitioning it into three stacked  ...  In par ticular, 3D IC is a good candidate to address the design issues in conventional analog/digital mixed-signal IC designs.  ...  For a 3D chip, multiple dies can be stacked together with various vertical interconnect tech niques, such as through-silicon-via (TSV), inductive or capacitive coupling, and wire-bonding.  ... 
doi:10.1145/2593069.2593122 dblp:conf/dac/LiuCHWXY14 fatcat:rl7dw5vg7fcyjfdlp5yef7vwiq

Near-Zero Drift and High Electromechanical Coupling Acoustic Resonators at >3.5 GHz

Ahmed E. Hassanien, Ruochen Lu, Songbin Gong
2021 IEEE transactions on microwave theory and techniques  
The electromechanical coupling and temperature coefficient of the resonator were analytically optimized for the A 3 mode through adjusting the thicknesses of different materials in the bimorph.  ...  Resonators with different dimensions and stack thickness were fabricated and measured, resulting in a temperature coefficient of frequency ranging from −17.6 to −1.1 ppm/ • C, high electromechanical coupling  ...  FEA simulation of the proposed stack in Fig. 13(b ) with similar electrode dimensions to device A resulted in k 2 t > 37%.  ... 
doi:10.1109/tmtt.2021.3079497 fatcat:4zxyizoygjc23ffwdpczj6oqay

Stacked space-folded acoustic metasurfaces for the flexible control of sound absorption

Xin Wang, Jiahao Wang, Zedong Ma, Ilya Deriy, Mingzhao Song, Andrey Bogdanov, Yongyao Chen
2024 APL Materials  
The SCFMs could be comprised of rigid plastics, ceramics, and metals and could be a good candidate for developing sound-absorbing devices capable of working in harsh environments.  ...  Here, we propose an acoustic absorber based on stacked SCFMs with side openings, which could effectively absorb line-spectrum noise as well as broadband noise.  ...  Figs. 3(b ) to 3(d) for more details on the geometrical parameters of SCFMs].  ... 
doi:10.1063/5.0175346 fatcat:ys7gflckivdxpllcydjeic4rp4

Oxygen migration during resistance switching and failure of hafnium oxide memristors

Suhas Kumar, Ziwen Wang, Xiaopeng Huang, Niru Kumari, Noraica Davila, John Paul Strachan, David Vine, A. L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams
2017 Applied Physics Letters  
Using this information, we reengineered devices to mitigate three failure mechanisms, and demonstrated an improvement in endurance of about three orders of magnitude.  ...  While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling  ...  After the first switching event of a device from its native OFF state to an ON state using a power of ~3 mW (using ~3 V), we imaged the memristor at multiple x-ray energies and clearly observed a ring-like  ... 
doi:10.1063/1.4974535 fatcat:yhe5qgenmvdyjnogmhhq33n2ce

3D heterogeneous sensor system on a chip for defense and security applications

Shekhar Bhansali, Glenn H. Chapman, Eby G. Friedman, Yehea Ismail, P. R. Mukund, Dennis Tebbe, Vijay K. Jain, Edward M. Carapezza
2004 Unattended/Unmanned Ground, Ocean, and Air Sensor Technologies and Applications VI  
We discuss a unique approach, namely a 3-D Heterogeneous System on a Chip (HSoC) in order to achieve a minimum 10X reduction in weight, volume, and power and a 10X or greater increase in capability and  ...  in the same compact volume.  ...  However, in a 3-D scenario, devices can couple directly through the intermediate substrates, significantly changing the nature of the problem.  ... 
doi:10.1117/12.548199 fatcat:fyftqqciqbckfen4zxvniyjila

Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

Amal M. Al-Amri, Po-Han Fu, Kun-Yu Lai, Hsin-Ping Wang, Lain-Jong Li, Jr-Hau He
2016 Scientific Reports  
An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres.  ...  The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres.  ...  The haze ratio is defined as: = Haze T T (1) d t where T d is the diffused transmittance representing the multiple order scattering and T t is total transmittance.  ... 
doi:10.1038/srep28671 pmid:27339612 pmcid:PMC4919627 fatcat:7cd2oa4yfvgknekmzkbwxwd6ue

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS [article]

Mostafizur Rahman, Santosh Khasanvis, Jiajun Shi, Mingyu Li, Csaba Andras Moritz
2014 arXiv   pre-print
We co-architect Skybridge's core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template.  ...  Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization.  ...  style, 3-D interconnect parasitics, and 3-D coupling noise.  ... 
arXiv:1404.0607v1 fatcat:do4ib2js3bamrk36534pfoiu3q

O-Band Subwavelength Grating Filters in a Monolithic Photonics Technology [article]

Francis O. Afzal, Yusheng Bian, Bo Peng, Shuren Hu, Kevin Dezfulian, Karen Nummy, Andy Stricker, Abdelsalam Aboketaf, Crystal Hedges, Zoey Sowinski, Michal Rakowski, Won Suk Lee (+4 others)
2020 arXiv   pre-print
To mitigate the costs associated with this change and achieve performance for 5G and beyond, it is crucial to explore advanced photonic devices that can enable high-bandwidth interconnects via wavelength-division  ...  multiplexing (WDM) in photonic integrated circuits.  ...  SEM images of the coupling section and taper region circled in (b) are shown in (c) and (d), respectively.  ... 
arXiv:2005.03551v1 fatcat:oq23zrfavnebdlh47bcqev2voi

Integrated flexible chalcogenide glass photonic devices

Lan Li, Hongtao Lin, Shutao Qiao, Yi Zou, Sylvain Danto, Kathleen Richardson, J. David Musgraves, Nanshu Lu, Juejun Hu
2014 Nature Photonics  
Further, we demonstrate that our technology offers a facile fabrication route for 3-D high-index-contrast photonics difficult to process using traditional methods.  ...  Noting that the conventional multilayer bending theory fails when laminates have large elastic mismatch, we derived a mechanics theory accounting for multiple neutral axes in one laminated structure to  ...  For this reason, a new analytical model was developed to take into account the multiple neutral axes in a multilayer stack so as to successfully capture the strain-optical coupling behaviour in our devices  ... 
doi:10.1038/nphoton.2014.138 fatcat:qhpxs5mlozgihcfe6xhllpmms4

GND Plugs: A Superior Technology to Mitigate TSV-Induced Substrate Noise

N. H. Khan, S. M. Alam, S. Hassoun
2013 IEEE Transactions on Components, Packaging, and Manufacturing Technology  
Through-silicon vias (TSVs) contribute to substrate noise in 3-D ICs, causing performance degradation of neighboring active devices and requiring keep-out zones.  ...  Our study demonstrates that the GND plug is a superior technology, effective in mitigating TSV-induced substrate noise by an order of magnitude when compared to the other techniques.  ...  For the last decade, 3-D stacked-die integration has been primarily realized with wirebond technology.  ... 
doi:10.1109/tcpmt.2013.2241178 fatcat:4e5acqvyx5fnvn2ho223oyug3u
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