Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM · Abstract · Authors · BibTeX · References · Bibliographies · Reviews · Related ...
Vertical transistor designs can be used to decrease chip real estate occupied by a memory cell transistor. An example of a memory cell with a vertical ...
A novel select transistor for high density integration of a stacked DRAM has been developed. The problem of high leakage current for sub 100 nm planar ...
May 20, 2021 · It maintains a higher density than DRAM with very low leakage current and a long refresh period.
Missing: Voltage Operation
This paper describes the device design guidelines for floating channel type surrounding gate transistor (FC-SGT) DRAM cells with high soft-error immunity.
The conditions of DRAM operation such as operating voltage ... high density split-gate memory cell for flash or EPROM ... Vertical bipolar read access for low ...
A sensor-like hardware mechanism measures the variation in latency and leakage at run-time and this measurement is used to update the bias voltage. The backbone ...
Mar 24, 2011 · This invention relates to the field of semiconductor transistors, and more specifically to transistors which are suitable for use in high ...
Jun 9, 2004 · ... voltage in conventional DRAM. It is shown that the novel NAND DRAM with SGT-type gain cell achieves high-density and low-voltage operation.
