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A 1.2-V 450-μW Gm-C Bluetooth Channel Filter Using a Novel Gain-Boosted Tunable Transconductor. from ieeexplore.ieee.org
Abstract—A third-order Gm-C Chebyshev low-pass filter based on a novel gain-boosted tunable transconductor is presented. The transcon-.
A third-order Gm-C Chebyshev low-pass filter based on a novel gain-boosted tunable transconductor and gain boosted feedback amplifier based on ...
A third-order Gm-C Chebyshev low-pass filter based on a novel gain-boosted tunable transconductor is presented. The transconductor employs local negative ...
A third-order Gm-C Chebyshev low-pass filter based on a novel gain-boosted tunable transconductor is presented. The transconductor employs local negative ...
A 1.2-V 450-μW Gm-C Bluetooth Channel Filter Using a Novel Gain-Boosted Tunable Transconductor ; ISSN · 1063-8210 ; Year of publication · 2015 ; Volume · 23 ; Issue · 8.
A third-order G m -C Chebyshev low-pass filter based on a novel gain-boosted tunable transconductor is presented. The transconductor employs local negative ...
2015 A 1.2-V 450-μW Gm-C Bluetooth channel filter using a novel gain-boosted tunable transconductor IEEE Trans Very Large Scale Integr Syst 23 1572. Crossref ...
The filter is fabricated in a 0.13 μm CMOS process. It exhibits a wide programmable bandwidth from 322.5 kHz to 20 MHz. Measured results show that the filter ...
A 1.2-V 450-μW Gm-C Bluetooth Channel Filter Using a Novel Gain-Boosted Tunable Transconductor ... Micropower active-RC channel filter for a zero-IF Bluetooth ...