@article{radamson_zhu_wu_he_lin_liu_xiang_kong_xiong_li_et al._2020, 
  title={State of the Art and Future Perspectives in Advanced CMOS Technology}, 
  volume={10}, 
  DOI={10.3390/nano10081555}, 
  abstractNote={<jats:p>The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.</jats:p>}, 
  number={8}, 
  publisher={MDPI AG}, 
  author={Radamson, Henry H. and Zhu, Huilong and Wu, Zhenhua and He, Xiaobin and Lin, Hongxiao and Liu, Jinbiao and Xiang, Jinjuan and Kong, Zhenzhen and Xiong, Wenjuan and Li, Junjie and et al.}, 
  year={2020}, 
  month={Aug}
  }