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Exploiting DRAM restore time variations in deep sub-micron scaling

Published:09 March 2015Publication History

ABSTRACT

Recent studies reveal that one of the major challenges in scaling DRAM in deep sub-micron regime is its significant variations on cell restore time, which affects timing constraints such as write recovery time tWR. Adopting traditional approaches results in either low yield rate or large performance degradation. In this paper, we propose schemes to expose the variations to the architectural level. By constructing memory chunks with different accessing speeds and, in particular, exploiting the performance benefits of fast chunks, a variation-aware memory controller can effectively compensate the performance loss due to relaxed timing constraints. Our experimental results show that, comparing to traditional designs such as row sparing and ECC, the proposed schemes help to improve system performance by up to 10.3% and 12.9%, respectively, for 20nm and 14nm tech nodes on a 4-core multiprocessor system.

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      • Published in

        cover image ACM Conferences
        DATE '15: Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition
        March 2015
        1827 pages
        ISBN:9783981537048

        Publisher

        EDA Consortium

        San Jose, CA, United States

        Publication History

        • Published: 9 March 2015

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        • research-article

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        DATE '15 Paper Acceptance Rate206of915submissions,23%Overall Acceptance Rate518of1,794submissions,29%

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